The Effect of Surface Structure on the Epitaxial Growth of Si on CoSi2

Recently there has been considerable interest in multilayered structures involving epitaxial silicides and silicon.[1-3] The use of a thin (30A) silicon template layer has been shown to improve the quality of the epitaxial Si layer on silicide (either NiSi2 or CoSi2). [1] High quality, single crystal Si layers can be grown on NiSi2 thin films, where the interface between silicide and the Si overlayer has type B symmetry.