The Effect of Uniaxial Stress on the Persistent Photoconductivity in Te-Doped Al sub x Ga sub (1-x) As.

Persistent photoconductivity in Te-doped Al sub x Ga sub (1- x) was measured. It was found that the photoconductivity rise is a phonon assisted process. The photoconductivity decay time increases with the application of stress. From the dependence of conductivity on stress, the donor level deformation potential is determined to be approximately 2 meV/kbar. Some evidence is presented that suggests that more than one DX type level is required to explain the features of the persistent photoconductivity.