The electrooptical effects of eternally applied <100> uniaxial stress on InGaAsP 1.3micron and 1.5miron injection lasers.

The changes with stress in the polarization of the emission, spectrum and light-current (LI) behavior of 1.3micron and 1. 5micron InGaAsP channeled substrate buried heterostructure laser and double channel planar buried heterostructure laser were quantified by external applying an uniaxial compressive stress perpendicular to the junction at room temperature. It was found that the TM emission (electric vector perpendicular to the junction) reaches threshold even at a stress level of ~1x10 sup 8 dynes cm sup (-2). The onset of TM emission can be understood in terms of the changes in the valence band edge under a compressive stress. For stress = 4 x 10 sup 8 dynes cm sup (-2), the TM emission, though reached threshold first, was found to exist only over a limited range of currents.