The Etching of Doped Polycrystalline Silicon by Molecular Chlorine.

The reaction rate of n-doped polycrystalline silicon with molecular chlorine was measured as a function of phosphorus dopant concentration between 300C and 500C. The effective activation energy of the gasification reaction is 13.4+- 1kcal/mole, and within experimental uncertainty, it does not change with doping level. By contrast, the preexponential factor varies from 4x10 sup (-12) to 1x10 sup (-10) (angstroms cm sup 3 /molec.min.K sup 1/2) as the doping level is increased from 3.3x10 sup (18) to 1.6x10 sup (20) atoms/cm sup 3 phosphorus.