The Growth of AlGaAs-GaAs Lasers on Si Substrates by Metalorganic Chemical Vapor Deposition

There is increasing interest in the growth of III-V compound semiconductors on Si substrates for electronic as well as for integrated optoelectronic applications. The successful growth of compound semiconductor heteroepitaxial injection lasers, photodetectors, waveguides, and modulators directly on Si would make possible the integration of Si electronics with high- speed low- power optoelectronic functions.