The growth of GaAs, AlGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkyls.
01 January 1986
The growth kinetic of chemical beam epitaxy (CBE) was investigated with the growth of GaAs, AlGaAs, InP, InGaAs. Results obtained with epilayers grown by using trimethylarsine (TMAs) and triethylphosphine (TEP) instead of arsine (AsH3) and phosphine (PH3) were reviewed. The CBE grown epilayers have similar optical quality to those grown by molecular beam epitaxy (MBE). Superlattices of GaAs/AlGaAs with abrupt interfaces have been prepared. Since trimethylindium (TMIn) and triethylgallium (TEGa) used in the growth of InGaAs emerged as a single mixed beam, spatial composition uniformity was automatically achieved without the need of substrate rotation in the InGaAs epilayers grown.