The Growth of GaAs on Si Substrates by Metalorganic Chemical Vapor Deposition

There is increasing interest in the heteroepitaxial growth of III-V compound semiconductors on Si substrates for electronic and optoelectronic applications. Much of the effort in this area has focussed on the growth of discrete AlGaAs-GaAs device structures on Si substrates. Several high-performance devices have been demonstrated, including GaAs modulation-doped field-effect transistors (MODFET's), light-emitting diodes (LED's), and lasers.