The growth of iron doped semi-insulating InP grown by hydride vapor phase epitaxy.
01 January 1988
The hydride vapor phase epitaxial (VPE) growth of semi-insulating (SI) InP:Fe is reported for the first time. Iron doping was achieved by using FeCl sub 2 generated in situ by reaction of HCl and powdered iron in a N sub 2 carrier, and the transport of iron as FeCl sub 2 was verified by optical absorption spectroscopy. In order to achieve InP growth in a n sub 2 carrier, input flowrates were adjusted to minimize the pyrolysis of PH sub 3. The thermodynamics of FeCl sub 2 transport in an inert carrier are discussed, and preliminary results showing the growth of 10 sup 8 OMEGA-cm InP;Fe using this technique are presented.