The Growth of Low Dislocation Density p-InP Single Crystals.

High quality p-type InP is critical for devices ranging from high power injection lasers to space-based solar cells. The availability of low defect density p-type Zn:InP has been limited to heavily doped, Liquid Encapsulated Czochralski (LEC) -grown substances until now. The growth of 50 mm diameter, low defect density, p-type, Zn:InP substrates has been achieved for the first time at doping levels below 10 sup (18) cm sup (-3). This is expected to result in reduced levels of twinning, free carrier absorption and Zn out-diffusion as well as an increase in the minority carrier diffusion length for solar cell devices. The 600 gram, 111> B-seeded crystals were grown by the vertical dynamic gradient freeze technique.