The influence of {111} regrowth sidewall interfaces on the performance of 1.54micron InGaAsP/InP etched-mesa-buried-heterostructure (EMBH) lasers.
01 January 1987
The quality of {111} sidewall interfaces formed during Liquid phase epitaxial regrowth around the etched mesa in EMBH laser structure has been studied using cross-sectional transmission electron microscopy (XTEM), cross-sectional transmission cathodoluminescenc e (XTCL) and energy dispersive x-ray analysis (EDX). The results are correlated with the optical performance and electrical characteristics of the device before the aging test. It is found that the interfacial lattice imperfection will effect the device performance only when the defects and non-radiative recombination centers or they constitute a leakage path for the current. The possible causes for a defective interface will be discussed.