The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2x1) and Si(111)-(7x7).

The initial stages of interface formation in the Si(100)-(2x1)/Ge and Si(111)- (7x7)/Ge systems are investigated using Rutherford Backscattering/Channeling techniques supported by Auger electron spectroscopy and low energy electron diffraction (LEED). For deposition at 300 K the Ge forms a sharp but highly disordered overlayer with no indication of islanding or indiffusion.