The interaction of Ti with SiO sub 2 after rapid thermal annealing in argon, nitrogen, and oxygen.
01 January 1989
The interaction of Ti with SiO sub 2 as a result of rapid thermal annealing in argon, nitrogen, and oxygen over a temperature range of 600-1100C has been studied using the analytical techniques of Auger depth profiling, Rutherford backscattering, and x- ray diffraction. After annealing in argon and nitrogen, Ti sub 5 Si sub 3 (with some oxygen) was formed at the Ti/SiO sub 2 interface at all temperatures in this range. For temperatures below 800C in Ar an outer uniform layer of alpha-Ti with randomly dissolved oxygen or Ti sub 2 O was formed. At temperatures above 800C a Ti oxide (O/Ti ratio 1.6) was formed. Annealing in an oxygen ambient showed the formation of rutile with very little reaction of the Ti with SiO sub 2. After annealing in nitrogen a three layered structure of TiN/TiO sub x/ Ti sub 5 Si sub 3 (with x = 1) was formed with the relative thickness of each layer dependent upon the annealing temperature. Discussion of the effect of the ambient on the various reactions and diffusion mechanisms is also presented.