The lever-arm model: describing resonant tunneling under bias at a fractional quantum Hall edge
01 January 2002
New tunnel current measurements of resonant tunneling at a voltage-biased quantum Hall effect edge are reported and explained with an in-depth discussion of the lever-arm model proposed previously by the authors. The results support the power-law description of the density of states at a sharp fractional quantum Hall edge. (C) 2002 Elsevier Science B.V. All rights reserved.