The low frequency dielectric responses of the charge density wave in (TaSe(4))(2)I.

We have found the CDW in (TaSe(4))(2)I to display a low frequency dielectric relaxation characterized by a distribution of relaxation times. The mean relaxation times vary between approximately 10-(4) and 10-(8) sec in the temperature range of 90 to 180K, and display an arrhenius temperature dependence with the same activation energy (1436K) as the normal resistivity. This is the only material thus far studied where such a straightforward connection between CDW relaxation and the bandgap has been observed.