The low pressure chemical vapor deposition of silicon dioxide films in the temperature range 450 to 600C from a new source: Diacetoxydi-t-butoxysilane.

In the temperature range 450-600C, the title compound (DADBS) deposits silicon dioxide films which have a refractive index of 1.44. The deposition rate increases from 20 to 250 angstrom/min as the temperature increases. Step coverage of micron-size features is perfectly conformal up to 500 and nearly so at 575. A 10,000 angstrom-high step of aluminum is coated conformally at 450C. The low-pressure CVD of DADBS shows promise that acetoxysilanes may prove to be a useful class of precursors for the deposition of dielectric coatings in the manufacture of VLSI devices, superior to the presently used tetraethylorthosilicate process which is limited to temperatures > 650; too high for use in aluminum.