The metal-insulator transition in amorphous Nb:Si.
01 January 1985
In this paper we discuss a series of measurements in the region of the metal-insulator transition in amorphous Nb(x)Si(1-x). We have measured the tunneling density of states and the electrical conductivity. We have observed modifications to the tunneling density of states on an energy scale delta which goes to zero at the metal insulator transition. Our samples were prepared in a manner which allows control of the Nb concentration, allowing one to step smoothly through the metal-insulator transition.