The MFe center: A configurationally Bi-stable defect in InP:Fe.
01 January 1984
We report the observation of a defect in Fe-doped InP which can exist in either of two configurations, for the same charge state. Each configuration exhibits distinct electronic and optical properties. Thermally stimulated capacitance, capacitance transient spectroscopy, and photocapacitance were used to study the properties of the defect in each configuration, and the configurational transformation kinetics. The unique properties of the defect are discussed.