The Occurrence of Cross Hatch During GaAs Homoepitaxy.
01 January 1986
We report on the observation of a morphogical defect structure, "cross-hatch" and the experimental circumstances that lead to it's occurrence during GaAs homoepitaxy. Photoluminescence, X-ray diffraction and TEM results obtained on cross hatched samples are presented and discussed in regards to the nature and origin of the defect structure.