The Photorefractive Properties of Doped CdTe.
01 January 1987
The first study of the photorefractive properties of doped CdTe has been made, demonstrating high sensitivity of the material for optical processing application. Of the binary II-VI and III-V semiconductors, CdTe has the highest electro-optic coefficient, r sub 41, in the infrared. It is three times larger than that of GaAs and InP which represents a four-fold increase in diffraction efficiency over these photorefractive semiconductors. Vanadium, titanium, iron and chromium were investigated as dopants in CdTe to introduce deep levels.