The Physical and Electrical Properties of Si and Si-Ge Heterostructures Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD)

RTCVD is a relatively new growth technique that results from the combination of rapid thermal heating lamps and a chemical vapor deposition chamber. The technique allows one to grow thin (50 A) and highly perfect films. This talk will start with consideration of CVD and its comparison to physical growth techniques. I will then discuss Si-Ge heterostructural films grown by RTCVD, going into the details of their physical and electrical properties, using heterojunction bipolar transistors as an example. Finally, I will discuss unique structures that have been grown by RTCVD.