The Production of Buried Silicide Nano-Structures in Silicon

High dose implantation followed by high temperature annealing has been used previously to produce buried layers of single-crystal metal silicides in silicon, ie. the mesotaxy technique. Using a combination of high resolution electron-beam lithography and reactive ion etching we have produced implantation masks that allow us to study the effect of lateral confinement of mesotaxy in the CoSi sub 2 system. By varying the linewidths of the mask from several micron's down to below 0.1 micron we have explored the structural and electrical properties of the structures as a function of their size. The analysis techniques used include Rutherford Backscattering Spectroscopy and transmission electron microscopy for structural studies and conventional transport measurements as well as electron beam induced current measurements to determine the electrical properties.