The reflection high-energy-electron diffraction (RHeED) studies on the molecular beam Expitaxial (MBE) growth of AlsB, GaSb, InAs, InAsSb and GaInAsSb on GaSb.
01 January 1985
The quality of MBE grown material is closely related to the surface kinetics in which the surface reconstructions, growth temperatures and molecular species play important roles. We present our studies on the MBE growth conditions, surface reconstructions and surface morphologies of AlSb, GaSb and InAs grown on (100) GaSb, and of InAsSb and GaInAsSb lattice -matched to GaSb using dimers As2 and Sb2 in a wide temperature range of ~400C-650C. Certain surface reconstructions for GaSb and InAs which have not been reported in the literature are identified, and the conditions for their existence are presented.