The role of inorganic materials in dry-processed resist technology.

A variety of materials and techniques are discussed concerning the use of inorganic materials in resist patterning technology. Their utility results from the ability of certain inorganic elements to function as in situ etch masks for underlying organic materials. Ion implantation experiments demonstrate that as little as 10(16) inorganic atom/cm(2) in the form of refractory oxides can function as an etch barrier during oxygen reactive ion etching of organic layers.