The Twin-Port Memory Cell

Static semiconductor memories have used cross coupled inverters as storage elements since the early 1960's because these regenerative circuits have been proven stable, compact, adaptable, and more reliable than any other. This paper presents yet another addition to this family with a cell that has the features of uncontested and asynchronous two port read access. Because this new cell requires only 20% more area than a conventional six transistor cell it offers significant advantages over other multi-port access methods.