The Use of Tertiarybutylphosphine and Tertiarybutylarsine as Group V Sources in MOMBE
We report on the use of tertiarybutylarsine (TBA) and tertiarybutylphosphine in metal organic MBE (MOMBE) growth of InP and Ga sub (0.47) In sub (0.53) As. The source materials in addition to TBA and TBP were triethylgallium (TEG) and trimethylindium (TMI). Single layers for evaluation by Hall measurements and Ga sub (0.47) In sub (0.53) As/InP heterostructures for luminescence and preliminary device studies have been grown.