The use of trimethylarsenic as a replacement for arsine in a hydride VPE reactor.

The hazardous gas, arsine, was replaced as a source in a hydride VPE reactor by the much less toxic liquid, trimethylarsenic. High quality InGaAs was grown. Samples wit no intentional doping were n-type with a background carrier concentration of 6 x 10 sup (15), about 3 times higher than that of comparison samples grown using arsine. Mobilities measured at 77K and 300K respectively were similar to those measured for corresponding samples grown using arsine, suggesting that no significant carbon incorporation occurred. Samples of InGaAsP (lambda ~ 1.26micron) were also grown using trimethylarsenic and phosphine. The literature of MOCVD using arsenic alkyls is briefly reviewed and contrasted with present hydride results. The differences are shown to be consistent with the respective growth processes and with available data on the pyrolysis of trimethylarsenic. It is concluded that the prognosis is excellent for the replacement of arsine in our hydride VPE reactors by an arsenic alkyl such as trimethylarsenic.