The Vertical Replacement - Gate (VRG) MOSFET

We have fabricated and demonstrated a new device called the Vertical Replacement-Fate (VRG) MOSFET. This is the first MOSFET ever built in which: 1) all critical transistor dimensions are controlled precisely without lithography; 2) the gate length is defined by a deposited film thickness, independently of lithography and etch; and 3) a high-quality gate oxide is grown on a single-crystal Si channel. In addition to this unique combination, the VRG-MOSFET includes self-aligned source/drain extensions (SDEs) formed by solid source diffusion (SSD), small parasitic overlap, junction, and S/D capacitances, and a replacement-gate approach to enable alternative gate stacks. We have demonstrated nMOSFETs with an initial VRG process, and pMOSFETs with a more mature process.