Theoretical and experimental analysis of InAs/InP quantum dash lasers

We study 1.5 mum quantum ldquodash in a wellrdquo (DWELL) and quantum ldquodash in a barrierrdquo (DBAR) lasers. Calculations for the DWELL show a similar magnitude can be achieved for the conduction and valence band density of states over a sizeable energy range, the optimum case for a semiconductor laser. Experimental characterisation shows the room temperature threshold current remains dominated by non-radiative recombination, as previously observed for 1.55 mum quantum well lasers.