Theoretical Studies of Electronic Conduction and Optical Generation Mechanisms in the Double Heterostructure Optoelectronic Switch (DOES)
01 January 1988
The calculate effects of the physical properties on the electrical and optical properties of the double-heterostructure optoelectronic switch (DOES) device are presented. The device is similar to an earlier reported version, but in the present case the charge sheet responsible for the unique electrical and optical switching properties of the device is placed in the wide band bap (WBG) barrier layer rather than in the narrow band gap (NBG) active layer.