Thermal memory effect characterization of GaN based class ABJ power amplifier using intrinsic temperature measurement
14 January 2018
Enhancing power efficiency and bandwidth of RF power amplifiers (PAs) is always a challenge for future mobile basestation transceivers. Static and especially dynamic nonlinear effects are mainly responsible for decreasing before mentioned parameters. Static effects can be usually characterized by measuring the PA output with a defined input signal. Fast changing dynamic nonlinearities like thermal memory effects are more difficult to determine but have a strong influence on the transfer characteristic of the PA. This work shows a method to measure the temperature of the device close to its channel in RF operation of the PA.