Thermal Strain and Photoluminescence Study of Lattice Mismatched In sub (u) Ga sub (1-u) As sub (1-v) Pv Epitaxial Films on InP Substrate

Single layers of 0.5microns thick epitaxial In sub (u) Ga sub (1-u) As sub (1-v) P sub (v) (.525 u .629 and .036 v .154) were grown on (100) InP substrate by Liquid Phase Epitaxy (LPE) technique at 630C. The films have lattice mismatch ranging from += 4x10 sup -4 to += 4x10 sup -3 with bandgap of ~0.8 eV (lambda=1.44microns) at room temperature. Strain in the film was characterized by double crystal x-ray diffraction with a controllable heating stage. The parallel x-ray strain is zero at room temperature within the experimental error.