Thermodynamic analysis of hole trapping in SiO2 films on silicon
01 January 2001
A thermodynamic approach based on the existence of a local equilibrium is used to evaluate the temperature dependence of the number of defects responsible for hole trapping (oxygen vacancies transformed into E' centers) near the Si-SiO2 interface. This approach eliminates the discrepancies between theoretical calculations of the formation energy of oxygen vacancies and hole trapping modeling. (C) 2001 American Institute of Physics.