Three-dimensional transient motion of moltan semiconductors
16 June 1986
In a recent paper [1], Crochet, Geyling and Van Schaftingen have given a survey of their recent work on the numerical simulation of the growth of semiconductor crystals. The simulation in [1] was limited to a two-dimensional modeling of this problem which is non-isothermal and transient and involves coexisting liquid and solid phases with a moving interface.