Transport-properties of selectively doped GaAs-(A1Ga)As heterostructures grown by molecular beam epitaxy.
01 January 1984
In selectively doped GaAs-(A1Ga) as heterostructures the two- dimensional (2D) electron-density is found to be monotonically decreasing with increasing separation (t(o)) between the mobile carriers and the doped (A1Ga) as layer. For t(o) >~ 60 angstroms the low temperature electron mobility, which can be as high as 1.6x10**6 cm**2/Vsec, does not show a correlation with t(o). Unidentified and as yet uncontrollable impurities in the vicinity of the 2D system are a likely source for the residual electron scattering.