Trichloride VPE Crystal Growth of InP/In0.47Ga0.47As Superlattice Structures for Avalanche Photodiode Applications

We describe the epitaxial crystal growth as well as analysis of the materials structures by secondary ion mass spectrometry (SIMS) and transmission electron microscopy. The periodic behavior of the SIMS profiles is indicative of the superlattice formation and the data suggest the formation of compositionally well defined superlattice layers. The TEM results indicate that there are no large-scale dislocations present within the superlattice layers.