Ultra-Thin Gate Oxide Reliability Projections

(PREVIOUS TITLE: Ultra-Thin Oxide Reliability Projections and Alternate Dielectrics) We describe the reliability projection methods currently used and show that 1.6nm oxides have sufficient reliability even if soft breakdown is considered the point of failure. We also explore the possibility of using oxides after soft breakdown. We review work that has been done on alternate dielectrics which may, at some point, replace silicon dioxide.