Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates

We report on InGaAs/InGaAlAs electro-absorption modulators for ultrafast all-optical signal processing. The structure design is based on the use of small conduction and valence band offsets. Switching windows as short as 5 ps for a 2 V applied reverse bias have been obtained by cross-absorption modulation. (C) 2004 American Institute of Physics.