Universal Conductance Fluctuations in Silicon Nanostructures.

We measure the conductance variations of submicrometer inversion layer segments in silicon MOSFETs, systematically changing the length, width, inelastic diffusion length, gate voltage, magnetic field, and temperature. Results agree with the theory of universal conductance fluctuations, demonstrating that random quantum interference causes rms conductance changes deltaG = e(2)/h in each phase-coherent subunit of each segment. The random quantum interference is extremely sensitive to changing a single scatterer.