Wide-Bandwidth and High-Power 1.3microns InGaAsP Buried Crescent Lasers with Semi-Insulating Fe-doped InP Current Blocking Layers.
01 January 1987
The fabrication and performance of 1.3microns InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers grown by MOVPE are reported. Modulation bandwidth above 5 GHz has been achieved at room temperature without using a mesa-stripe geometry. On the same device, CW output power up to 30 mW per facet at 20C and CW operation up to 95C are obtained. The semi-insulating InP layer alone is proved to be an effective current blocking layer.