X-ray, photoluminescence, and SIMS characterization of InGaAs/lnP grown by vapor phase epitaxy.
01 January 1987
X-ray double crystal diffractometry (DCD), low temperature photoluminescence (PL), and secondary ion mass spectrometry (SIMS) have been used to characterize single epitaxial layers grown by hydridechloride-, and levitation-vapor phase epitaxy (VPE). Coherent hydride layers exhibited both bound exciton and C related donor-acceptor peaks, and the deduced band gaps and alloy compositions were found to agree with published values. For coherent hydride-VPE layers shifts on no more than 1 meV in the PL spectra for various positions on the wafer were observed. A layer found to be incoherent by DCD, on the other hand, exhibited luminescence shifted by up to 9 meV for various positions on the wafer.