As optimally designed process used for 0.75micron CMOS technology is described in this memorandum.
A twin-tub 1 um CMOS technology has been developed for logic and custom IC applications. The technology utilizes LDD n-channel and buried p-channel devices with TaSi2/n+ polysilicon gate.
The application of cylindrical magnetic domains or "bubbles" to memory and logic devices has recently received considerable attention.
We report an investigation of the buffer leakages on VLSI devices using a fundamentally new thermal imager based on the fluorescence of Europium Thenoyltrifluoroacetonate.
In this work, we propose a new non-linear equivalent circuit which is able to model the low frequency dispersion phenomena caused by the trapping effects in GaAs and GaN devices.
We are witnessing a trend of users owning multiple data-generating wearable and IoT devices that continuously capture sensor data pertaining to a user's activities and context.
DEVOTED T O T H E S C I E N T I F I C AND E N G I N E E R I N G ASPECTS OF ELECTRICAL C O M M U N I C A T I O N Copyright © 1970, American Telephone and Telegraph Company Device Photolithography Fo
In the design of the mask-making laboratory, the need for a precise positional-measurement system was recognized.
The Electronic Materials and Components Development Area of Bell Telephone Laboratories has made the development of hybridintegrated electronics, combining semiconductor and thin-film technologies,
Computers are indispensable today in the operation of any sizable mask-making laboratory.
