The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectivity doped heterostructures using unscreened screened Coulomb-potentials.
The phenomenon of dopant dose loss through trapping at the Si-SiO sub 2 interface has important consequences for MOS device fabrication.
We investigated the effects of SrTiO sub 3 and seventeen different oxide dopants, namely Ca, Sc, La and Zr with possible substitution in the yttrium sites, K, Sr and Pb in the barium sites and Li,
Dopant atoms in semiconductors need to be imaged with increasing precision to help keep Moore's law on track.
Dopants in any layer of the silicide-silicon or silicide-polycrystalline silicon bilayer structures are found to distribute readily throughout the bilayer affecting the electrical and the mechanica
EXAFS experiments on La2-xSrxCuO4 (LSCO) have revealed that the Sr dopants occupy two kinds of sites, a magnetic Cu one with long Sr-apical O bonds, and a metallic Cu one with short Sr-apical O bon
The diffusion depth and total amount of deuterium incorporated in GaAs during plasma exposure is found to depend strongly on the conductivity type of the surface.
This paper studies decentralized, Fountain and network-coding based strategies for facilitating data collection in circular wireless sensor networks, which rely on the stochastic diversity of data
Landau - Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply understood as independent particles with effective masses replacing the free electron mass, has been
Absolute rates for the intrinsic reaction between Cl atoms and surfaces of P-doped polycrystalline silicon, P-doped Si (100) and As, Sb-doped Si(111) substrates were measured for the first time as
