Digital connectivity will become pervasive in a few years.
In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface.
We investigate doping effects in ZnO layers using Li3N as a doping source by plasma-assisted molecular-beam epitaxy.
We have succeeded for the first time in artificially tuning the conduction and valence band barrier heights at an abrupt intrinsic semiconductor- semiconductor heterojunction via a doping interface
The calculated band properties of the cuprate and bismuthate high-T sub c superconductors provide valuable insight regarding the chemistry and doping mechanisms that are operative in these compound
The doping of Zn (p-type) in GaAs and Al(0.35)Ga(-.65)As and that of Se (n-type in Al(0.35)Ga(0.65)As grown by the metal organic chemical vapor deposition method is studied.
The doping characteristics of S in the metalorganic vapor phase epitaxial growth of InP and GaInAs are studied using 3 different but consistent methods of determining the doping level in the crysta
VOR stands for "VHF Omnirange" a term used to describe a system of navigation using very-high-frequency omnidirectional radio beacons for determining the course of an aircraft.
We numerically investigate simulation conditions to accurately emulate the impact of four-wave mixing in 10Gbit/s systems based on low-dispersion fibre, such as the statistical impact of phase/time
Transient enhanced diffusion of dopants in silicon is frequently modeled using the ``+ 1{''} approximation of implantation damage.
