High-sensitivity, femtosecond differential transmission measurements on self-organized InAs quantum dots at room temperature allow us to determine the dynamics of resonantly excited electron-hole p
High-sensitivity, femtosecond differential transmission measurements on self-organized InAs quantum dots at room temperature allow us to determine the dynamics of resonantly excited electron-hole p
We use tunable optical pulses of 150 fs duration to measure the dynamics of exciton absorption in optically excited room temperature GaAs/AlGaAs multiple quantum well structures.
We report the first direct measurement of the relative bleaching strength of excitonic absorption by "cool" free e-h pairs and cold excitons.
We report the first observation of non-thermal photoexcited carrier distributions in GaAs quantum well structures at room temperature.
A study of nonequilibrium transport of carriers in GaAs and InP at electric fields up to 130 kV/cm and with a temporal resolution of 20 fs is presented.
We report the measurement of intervalley scattering rates for optically excited carriers in GaAs.
We report luminescence measurements in GaAs with femtosecond time resolution.
We report compression of the pulses from a synchronously pumped Rh 6G dye laser to 60 fs using a fiber-prism compressor. Average power in excess of 150 mW has been obtained.
A number of techniques have been developed for amplification of optical pulses of approximately 100 fs duration.
