Publications

A digital subscriber line access multiplexer that multiplexes streaming packetised telephony and/or video-on-demand traffic is studied.

We demonstrate interoperability of a 59 km few-mode-fiber span, a 35 km coupled-core multi-core fiber span, and a 15-km six SMF span in a wavelength routed network using 48-port WSSs compatible wit

We report on a III-V on Silicon distributed Bragg reflector laser with adiabatic coupling operating continuous wave at 1547 nm.

An InP/Silicon hybrid laser based on double taper adiabatic mode transfer and BCB bonding is demonstrated, exhibiting nearly 1 mW output power at room temperature in pulsed operation regime.

In this presentation, we will present our design strategies adopted to boost the performance of heterogeneously integrated III-V-on-Si quantum well lasers for optical communications.

Heterojunction InP/InGaAs phototransistors with base terminals have been fabricated by atmospheric pressure metal organic vapor phase epitaxy.

Remarkable progress has been made in practical use of high-speed heterostructure device technologies for communications.

The principles and technology of Heterostructure FETs (HFETs) are reviewed in this talk.

Since the demonstration of the first n-AlGaAs/GaAs Heterostructure FET (HFET) in 1980, it has been shown to be a promising technology for microwave and digital applications.

The heterostructure field effect transistor (HFET) has made a dramatic impression on ultra-high speed electronics since the pioneering work in the early 1980's.