We review recent advances in hybrid integration of III-V and Silicon devices using edge coupling.
The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market.
Silicon photonics has reached a considerable level of maturity, and the complexity of photonic integrated circuits (PIC) is steadily increasing.
A hybrid III-V/silicon SOA is presented, which shows a maximum fiber-to-fiber gain of 10 dB and a maximum internal gain around 28±2 dB.
We report on a hybrid III-V on silicon laser, fabricated by wafer-scale molecular bonding, and directly modulated at 10Gb/s for transmission over distances up to 60km.
This paper reports on recent advances on hybrid III-V on silicon integration using a wafer bonding technique.
A hybrid InP/SiN tunable laser based on microring resonators exhibiting 40mW fiber-coupled output power and 5kHz linewidth is demonstrated.
A 60 GHz transmit module comprising fibre input, high-gain MMIC amplifier, and planar antenna is presented.
We report on a 1.55 micron low chirp EA-modulated hybrid integrated wavelength selectable DFB laser array.
We demonstrate a novel wavelength-tunable hybrid silicon-based transmitter with integrated reflectivity tunable mirror.
