Publications

We used the molecular wafer bonding technique to develop a hybrid widely tunable, monomode III-V/Si laser for wavelength division multiplexing, with a tunability over 35 nm and an output power in e

We review some of our latest contributions for on-chip high-speed optical communications using the hybrid III-V-on-Si platform.

We report on a fully integrated hybrid III-V on silicon distributed feedback laser integrated with a ring resonator, which enables direct modulation at 25 Gb/s with 20dB optical budget at 20km and

Silicon photonics is attracting large attention due to the promise of fabricating low-cost, compact circuits that integrate photonic and microelectronic elements.

This paper reports on hybrid III-V on silicon lasers, integrating one III-V active waveguide and two intra-cavity ring resonators. Such lasers are fabricated using a wafer bonding technique.

We review recent advances in hybrid integration of III-V and Silicon devices using edge coupling.

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market.

Silicon photonics has reached a considerable level of maturity, and the complexity of photonic integrated circuits (PIC) is steadily increasing.

A hybrid III-V/silicon SOA is presented, which shows a maximum fiber-to-fiber gain of 10 dB and a maximum internal gain around 28±2 dB.

We report on a hybrid III-V on silicon laser, fabricated by wafer-scale molecular bonding, and directly modulated at 10Gb/s for transmission over distances up to 60km.