Publications

Displaying 18191 - 18200 of 37748

Kinematics of molecular clouds I: Velocity dispersion in the solar neighborhood.

The velocity dispersions of low mass 10(2)M(solar) ~M(c) ~10 (4)M(solar) and moderate mass 10(4)M(solar) ~M(c) ~10(5.5)M (solar) molecular clouds in the solar neighborhood (tau ~ 3kpc) are determi

Kinematics of Molecular Clouds. II. New Data on Nearby GMCs.

The best currently available data on positions, distances and velocities of Giant Molecular Clouds within 3 kpc of the sun are analyzed to yield a one-dimensional rms velocity dispersion sigma sub

Kinetic analysis of the crystallization of poly(rho-phenylene sulfide).

Growth rates of spherulites were measured in poly(rho-phenylene sulfide) crystallized from the melt and the quenched glass over the temperature range 100-280C, possible the most extensive overall

Kinetic Consequences of Adding Rare Gases to Radio Frequency Glow Discharges Through Boron Trichloride.

Because mixtures of rare and molecular gases are often used in plasma processing (to achieve desired etch or deposition rates, selectivity, anisotropy, etc.), we investigated the kinetic consequenc

Kinetic Inductance Measurement of Superconducting YBa sub 2 Cu sub 3 O sub 7 Crystals and Epitaxial Films

Crystals for this study were 25microns-thick platelets, grown in a copper-oxide flux and annealed in O sub 2.

Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data

Kinetic Monte Carlo (KMC) atomistic process simulations mimic the jumps and interactions of individual atoms, based on jump rates derived from ab initio calculations or experiments.

Kinetic Study of the Hydrogen Lateral Diffusion at High Temperature in a Directly-Bonded InP-SiO2/Si substrate

In this work, we study the void formation at the bonding interface of a directly-bonded InP layer on a thermally-oxidized Si substrate (InP-SiO2/Si) under high-temperature annealing.

Kinetics of arsenic activation and clustering in high dose implanted silicon.

We have observed a meta-stable state in the activation of high dose arsenic implanted silicon.

Kinetics of cluster formation in the laser vaporization source: Carbon clusters.

A general model of cluster formation in the laser vaporization source starting from the atomic vapor is developed and applied to carbon clusters.

Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs-Ga(x)Al(1-x)As MBE interfaces.

The kinetics of implantation enhanced interdiffusion at GaAs- Ga(x)Al(1-x)As interfaces is investigated by cathodoluminescence and transmission electron microscopy.