We report preliminary studies of the growth of homoepitaxial GaAs by laser-assisted metal-organic molecular beam epitaxy, using triethyl gallium and As sub 4 sources and a 193 nm ArF excimer laser.
Mid-infrared (MIR) (3-12 um) spectral imaging is a power analytical tool, but difficult in the back-reflectance mode for in-vivo diagnostics.
Mid-infrared ( MIR) (3-12 um) spectral imaging is a power analytical tool, but difficult in the back-reflectance mode for in-vivo diagnostics.
We present evidence for the excitation of the two-photon Doppler- free 1S-2S transition in muonium.
We report X-ray photoelectron spectroscopy (XPS) studies of excimer laser stimulated decomposition of triethylgallium (TEGa) and trimethylgallium (TMGa) adsorbed on GaAs(100) surfaces in ultrahigh
Laser induced fluorescence (LIF) detection of Cl sub 2 sup + ions has been used to track their relative concentration in a high-density inductively (transformer) coupled (TCP) 10 mTorr chlorine pla
Frequency-resolved laser-induced gamma-ray anisotropy has been achieved and used to measure the D1 hyperfine structure of the 1 microsecond isomer (85m) Rb.
Decomposition of Au metallopolymer thin films induced by a scanning cw Ar(+) laser leads to metallic features that, under a broad range of experimental conditions, exhibit marked periodic structure
In our studies of dye-infiltrated opal photonic crystals, we find a stimulated emission regime, which is characterized by highly efficient, directional laser-like emission and a complex finely stru
We report preliminary results on the effect of 193 nm ArF excimer laser irradiation on molecular-beam epitaxial growth of (Al)GaAs on GaAs (100) substrates and of GaAs on lattice- matched (Ca,Sr)F
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