In this work, we study the void formation at the bonding interface of a directly-bonded InP layer on a thermally-oxidized Si substrate (InP-SiO2/Si) under high-temperature annealing.
We have observed a meta-stable state in the activation of high dose arsenic implanted silicon.
A general model of cluster formation in the laser vaporization source starting from the atomic vapor is developed and applied to carbon clusters.
The kinetics of implantation enhanced interdiffusion at GaAs- Ga(x)Al(1-x)As interfaces is investigated by cathodoluminescence and transmission electron microscopy.
The dynamical response of a binary mixture of homopolymers in the vicinity of its critical point is investigated.
The photopolymerization of a number of neat acrylate monomers with acrylate functionality from 1-6 was studied with photoDSC (DSC differential scanning calorimetry) and with a cure monitor using a
The kinetics of the oxidation of dense and porous samples of Ba sub 2 YCu sub 3 O sub x ceramic have been determined by gravimetric analysis at 400 to 700C.
Accurate kinetic parameters for desorption of group-III metals are necessary in modeling of epitaxial deposition of ternary and quaternary III-V films.
The Internet of Things (IoT) represents the next significant step in the evolution of the Internet and software development.
Various methods have been developed for indoor localization using WLAN signals.
