Publications

An impressive technology now exists for the fabrication of photodetectors based on InGaAsP/InP heteroepitaxy.

We report the realization of the first semiconductor injection lasers based on intraband transitions with emission wavelengths extending beyond the atmospheric windows.

We report the realization of the first semiconductor injection lasers based on intraband transitions with emission wavelengths extending beyond the atmospheric windows.

Presents a novel VCSEL design which is monolithic, planar and combines the advantages of AlAs/GaAs DBRs and InP based active layers.

In this Letter we report on lateral diffusion measurements of excitons at low temperature in double quantum wells of various widths.

While short-range planners of AT&T switch deployment make extensive use of site-specific data and detailed engineering simulation, long-range planners often use approximate, easy-to-use formula

We report results on 40 Gb/s DWDM transmission over distances greater than 1000km on several commercially available fiber types using a single 53 nm transmission band.

Results are reported of 40 Gbit/s DWDM transmission over distances greater than 1000 km on several commercially available fibre types using a single 53 nm transmission band.

Results are reported of 40 Gbit/s DWDM transmission over distances greater than 1000 km on several commercially available fibre types using a single 53 nm transmission band.

Microresonator-based frequency combs are strong contenders as light sources for wavelength-division multiplexing (WDM).