The nature of the electronic states present in semiconductor clusters made by arrested precipitation is investigated via luminescence spectroscopy.
We have investigated luminescence processes in high purity In(0.53) Ga(0.47) as grown by liquid phase epitaxy on InP substrate.
We describe photoluminescence investigations in InAs-GaAs superlattices in the thin-layer limit (10-20 A).
The appearance of a luminescence ring around a central illumination spot in quantum well structures is now well understood in terms of charge separation between the electron and hole gasses in the
We review the results of an extensive study of the novel luminescence rings found in GaAs and InGaAs double quantum well structures.
Modern organolanthanoid chemistry relies almost entirely upon X-ray crystallography for the study of complex structure.[1,2] Unfortunately, solid-state and solution-phase structures of a given comp
The material is intended to be used for an invited talk in a technical conference attended by Industry and Academia in IISc, Bangalore, and organized by Mojo Networks.
3GPP LWIP Release 13 technology and its prestandard version Wi-Fi Boost have recently emerged as an efficient LTE and Wi-Fi integration at the IP layer, allowing uplink on LTE and downlink on Wi-Fi
As fiber-optic transmission penetrates the loop distribution network, frequent sheath entry for splicing into a tapered network will be required.
This paper describes a methodology for simulation of mixed analog-digital circuits.
